1 2 3 4 5 6 sot-363 LMBT3904DW1T1 devic e packag e shipping orderin g inform a tion l mbt3904dw1t 1 sot36 3 3000 units/reel th e l mbt3904dw1t 1 devic e i s a spino ff o f ou r popular sot23/sot32 3 threeleaded device. it is designed for general purpos e amplifier applications and is housed in the sot363 sixleade d surface mount package. by putting two discrete devices in one package, this device is ideal for lowpower surface mount application s where board space is at a premium. ? h fe , 100300 ? low v ce(sat ) , 0.4 v ? simplifies circuit design ? reduces board space ? reduces component count ? a vailable in 8 mm, 7inch/3,000 unit t ape and reel ? device marking : l m bt3904dw1t1 = ma symbol v alue unit collecto r emitte r v oltage v ceo 40 vdc collecto r base v oltage v cbo 60 vdc emitte r base v oltage v ebo 6.0 vdc collector current continuous i c 200 madc electrostatic discharge esd hbm>16000, mm>2000 v therma l characteristics characteristic symbol max unit t ota l package dissipatio n (1) t a = 2 5 c p d 150 mw thermal resistance junction to ambient r ja 833 c/w junction and storage t emperature range t j , t stg 55 to +150 c 1. device mounted on fr4 glass epoxy printed circuit board using the minimum 1. recommended footprint. rating maximum ratings q 1 q 2 (1) (2) (3) (4) (5) (6) product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collectoremitter breakdown voltage (2) (i c = 1.0 madc, i b = 0) v (br)ceo 40 vdc collectorbase breakdown voltage (i c = 10 adc, i e = 0) v (br)cbo 60 vdc emitterbase breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 6.0 vdc base cutoff current (v ce = 30 vdc, v eb = 3.0 vdc) i bl 50 nadc collector cutoff current (v ce = 30 vdc, v eb = 3.0 vdc) i cex 50 nadc on characteristics (2) dc current gain (i c = 0.1 madc, v ce = 1.0 vdc) (i c = 1.0 madc, v ce = 1.0 vdc) (i c = 10 madc, v ce = 1.0 vdc) (i c = 50 madc, v ce = 1.0 vdc) (i c = 100 madc, v ce = 1.0 vdc) h fe 40 70 100 60 30 300 collectoremitter saturation voltage (i c = 10 madc, i b = 1.0 madc) (i c = 50 madc, i b = 5.0 madc) v ce(sat) 0.2 0.3 vdc baseemitter saturation voltage (i c = 10 madc, i b = 1.0 madc) (i c = 50 madc, i b = 5.0 madc) v be(sat) 0.65 0.85 0.95 vdc smallsignal characteristics currentgain bandwidth product (i c = 10 madc, v ce = 20 vdc, f = 100 mhz) f t 300 mhz output capacitance (v cb = 5.0 vdc, i e = 0, f = 1.0 mhz) c obo 4.0 pf input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c ibo 8.0 pf 2. pulse test: pulse width 300 m s; duty cycle 2.0%. LMBT3904DW1T1 product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a = 25 5 c unless otherwise noted) (continued) characteristic symbol min max unit input impedance (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) h ie 1.0 2.0 10 12 k w voltage feedback ratio (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) h re 0.5 0.1 8.0 10 x 10 4 smallsignal current gain (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) h fe 100 100 400 400 output admittance (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) h oe 1.0 3.0 40 60 mhos noise figure (v ce = 5.0 vdc, i c = 100 adc, r s = 1.0 k w , f = 1.0 khz) nf 5.0 4.0 db switching characteristics delay time (v cc = 3.0 vdc, v be = 0.5 vdc) t d 35 ns rise time (i c = 10 madc, i b1 = 1.0 madc) t r 35 ns storage time (v cc = 3.0 vdc, i c = 10 madc) t s 200 ns fall time (i b1 = i b2 = 1.0 madc) t f 50 ns figure 1. delay and rise time equivalent test circuit figure 2. storage and fall time equivalent test circuit +3 v 275 10 k 1n916 c s < 4 pf* +3 v 275 10 k c s < 4 pf* < 1 ns -0.5 v +10.9 v 300 ns duty cycle = 2% < 1 ns -9.1 v 4 +10.9 v duty cycle = 2% t 1 0 10 < t 1 < 500 s * total shunt capacitance of test jig and connectors LMBT3904DW1T1 product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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